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IXFT20N100P, IXFH20N100P Datasheet - IXYS Corporation

IXFT20N100P - Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C IXFH20N100P IXFT20N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 20A 570mΩ 300ns Maximum Ratings 1000 1000 ± 30 ± 40 20 50.

IXFT20N100P Features

* z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS,

IXFH20N100P_IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXFT20N100P, IXFH20N100P. Please refer to the document for exact specifications by model.
IXFT20N100P Datasheet Preview Page 2 IXFT20N100P Datasheet Preview Page 3

Datasheet Details

Part number:

IXFT20N100P, IXFH20N100P

Manufacturer:

IXYS Corporation

File Size:

134.72 KB

Description:

Polar power mosfet hiperfet.

Note:

This datasheet PDF includes multiple part numbers: IXFT20N100P, IXFH20N100P.
Please refer to the document for exact specifications by model.

IXFT20N100P Distributor

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