HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet IXFH 23N60Q IXFT 23N60Q VDSS ID25 RDS(on) = = = 600 V 23 A 0.32 Ω trr ≤ 250ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A
IXFH23N60Q_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFT23N60Q, IXFH23N60Q
Manufacturer:
IXYS Corporation
File Size:
590.00 KB
Description:
Hiperfet power mosfets q-class.
Note:
This datasheet PDF includes multiple part numbers: IXFT23N60Q, IXFH23N60Q.
Please refer to the document for exact specifications by model.