IXFT23N80Q, IXFH23N80Q HiPerFET Power MOSFETs Q-Class

IXYS Corporation

Description

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt P.

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IXFT23N80Q Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFT23N80Q, IXFH23N80Q. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXFT23N80Q, IXFH23N80Q
Manufacturer: IXYS Corporation
File Size: 598.85 KB
Datasheet: IXFH23N80Q_IXYSCorporation.pdf
Description: HiPerFET Power MOSFETs Q-Class
Note: This datasheet PDF includes multiple part numbers: IXFT23N80Q, IXFH23N80Q.
Please refer to the document for exact specifications by model.

Features

* z z z 1.13/10 Nm/lb. in. z 20120/4.527 N/lb 6 4 g g z z IXYS advanced low Qg process International standard packages Epoxy meets UL 94 V-0 flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier Advantages z z Symbol Test Conditions Characte

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IXFH23N80Q HiPerFET Power MOSFETs Q-Class IXYS Corporation

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