* Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 25 250 330 V V nA µA µA mΩ z z z International sta
IXTQ22N60P Datasheet (198.95 KB)
IXTQ22N60P
IXYS
198.95 KB
Polarhv power mosfet.
www.DataSheet4U.com PolarHV Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet TM IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS(o.
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