IXTQ200N06P Datasheet - INCHANGE

IXTQ200N06P - N-ChannelMOSFET

IXTQ200N06P Features

* Drain Source Voltage- : VDSS= 60V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max)

* Fast Switching

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Switch-Mode and Resonant-Mode Power S

Datasheet Details

IXTQ200N06P

INCHANGE

267.94 KB

N-channelmosfet.

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