Datasheet Details
- Part number
- IXTQ200N06P
- Manufacturer
- INCHANGE
- File Size
- 267.94 KB
- Datasheet
- IXTQ200N06P-INCHANGE.pdf
- Description
- N-ChannelMOSFET
IXTQ200N06P Description
isc N-Channel MOSFET Transistor *.
IXTQ200N06P Features
* Drain Source Voltage-
: VDSS= 60V(Min)
* Static Drain-Source On-Resistance
: RDS(on) = 6mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IXTQ200N06P Applications
* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* AC and DC Motor Drives
* Robotics and Servo Controls
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Curre
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