IXTQ23N60Q
IXYS Corporation
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Power mosfets q-class.
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IXTQ23N60Q - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 320mΩ(Max) ·Fast Sw.
IXTQ230N085T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH230N085T IXTQ230N085T
VDSS = ID25 =
RDS(on.
IXTQ230N085T - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 85V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.4mΩ(Max) ·Fast Swi.
IXTQ200N06P - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 6mΩ(Max) ·Fast Switc.
IXTQ200N06P - Power MOSFET
(IXYS)
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 200N06P
V DSS
ID25
RDS(on)
= 60 = 200 ≤ 6.0
V A mΩ
Symbol
Test Conditions.
IXTQ200N075T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
Trench Gate Power MOSFET
IXTH200N075T IXTQ200N075T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(.
IXTQ200N075T - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 75V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5mΩ(Max) ·Fast Switc.
IXTQ200N085T - Power MOSFET
(IXYS Corporation)
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTH200N085T IXTQ200N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(o.
IXTQ200N085T - N-ChannelMOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 85V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5mΩ(Max) ·Fast Switc.
IXTQ200N10T - Power MOSFET
(IXYS Corporation)
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH200N10T IXTQ200N10T
Symbol VDSS VDGR
VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tst.
