Preliminary Technical Information TrenchMVTM Power MOSFET IXTH200N085T IXTQ200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC =
IXTH200N085T-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTQ200N085T, IXTH200N085T
Manufacturer:
IXYS Corporation
File Size:
196.37 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTQ200N085T, IXTH200N085T.
Please refer to the document for exact specifications by model.