TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque TO-247 TO-3P Maximum Ratings 100 100 V V ± 30 V 200 A 75 A 500 A 40 A 1.5
IXTH200N10T-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTQ200N10T, IXTH200N10T
Manufacturer:
IXYS Corporation
File Size:
164.19 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTQ200N10T, IXTH200N10T.
Please refer to the document for exact specifications by model.