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IXTQ230N085T

Power MOSFET

IXTQ230N085T Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, V

IXTQ230N085T Datasheet (195.85 KB)

Preview of IXTQ230N085T PDF

Datasheet Details

Part number:

IXTQ230N085T

Manufacturer:

IXYS Corporation

File Size:

195.85 KB

Description:

Power mosfet.
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH230N085T IXTQ230N085T VDSS = ID25 = RDS(on.

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IXTQ230N085T Power MOSFET IXYS Corporation

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