IXTQ230N085T, IXTH230N085T Power MOSFET

IXYS Corporation

Description

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH230N085T IXTQ230N085T VDSS = ID25 = RDS(on.

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IXTQ230N085T Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTQ230N085T, IXTH230N085T. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXTQ230N085T, IXTH230N085T
Manufacturer: IXYS Corporation
File Size: 195.85 KB
Datasheet: IXTH230N085T-IXYSCorporation.pdf
Description: Power MOSFET
Note: This datasheet PDF includes multiple part numbers: IXTQ230N085T, IXTH230N085T.
Please refer to the document for exact specifications by model.

Features

* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, V

Applications

* Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications © 2006 IXYS CORPORATION All rights reserved DS99645(11/06) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs VDS=

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IXTH230N085T Power MOSFET IXYS Corporation

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