* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 1 mA IGSS VGS = ± 20 V, VD
IXTQ220N055T Datasheet (195.48 KB)
IXTQ220N055T
IXYS Corporation
195.48 KB
Power mosfet.
Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH220N055T IXTQ220N055T
VDSS = ID25 =
RDS(on.
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