Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N055T IXTQ220N055T VDSS = ID25 = RDS(on) ≤ 55 220 4.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C,
IXTH220N055T-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTQ220N055T, IXTH220N055T
Manufacturer:
IXYS Corporation
File Size:
195.48 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTQ220N055T, IXTH220N055T.
Please refer to the document for exact specifications by model.