Datasheet Details
- Part number
- IXTQ24N55Q
- Manufacturer
- INCHANGE
- File Size
- 252.29 KB
- Datasheet
- IXTQ24N55Q-INCHANGE.pdf
- Description
- N-Channel MOSFET
IXTQ24N55Q Description
isc N-Channel MOSFET Transistor *.
IXTQ24N55Q Features
* Drain Source Voltage-
: VDSS= 550V(Min)
* Static Drain-Source On-Resistance
: RDS(on) = 270mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IXTQ24N55Q Applications
* Switching Voltage Regulators
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
550
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
24
A
IDM
Drain Current-Single Plused
96
A
PD
Total Dissipation @TC=25℃
400
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