Datasheet Details
- Part number
- IXTQ23N60Q
- Manufacturer
- INCHANGE
- File Size
- 252.65 KB
- Datasheet
- IXTQ23N60Q-INCHANGE.pdf
- Description
- N-Channel MOSFET
IXTQ23N60Q Description
isc N-Channel MOSFET Transistor *.
IXTQ23N60Q Features
* Drain Source Voltage-
: VDSS= 600V(Min)
* Static Drain-Source On-Resistance
: RDS(on) = 320mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IXTQ23N60Q Applications
* Switching Voltage Regulators
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
23
A
IDM
Drain Current-Single Plused
92
A
PD
Total Dissipation @TC=25℃
400
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