IXTQ240N055T Datasheet, Mosfet, IXYS Corporation

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Part number:

IXTQ240N055T

Manufacturer:

IXYS Corporation

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195.65kb

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📄 Datasheet

Description:

Power mosfet.

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IXTQ240N055T

IXYS Corporation

📁 Related Datasheet

IXTQ240N055T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6mΩ(Max) ·Fast Swi.

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5mΩ(Max) ·Fast Switc.

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5mΩ(Max) ·Fast Switc.

IXTQ200N10T - Power MOSFET (IXYS Corporation)
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tst.

IXTQ200N10T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) ·Fast Sw.