Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N075T IXTQ220N075T VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
IXTH220N075T-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTQ220N075T, IXTH220N075T
Manufacturer:
IXYS Corporation
File Size:
179.72 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTQ220N075T, IXTH220N075T.
Please refer to the document for exact specifications by model.