Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C
IXTH200N075T-IXYSCorporation.pdf
Datasheet Details
Part number:
IXTQ200N075T, IXTH200N075T
Manufacturer:
IXYS Corporation
File Size:
178.97 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTQ200N075T, IXTH200N075T.
Please refer to the document for exact specifications by model.