IXTQ26N60P - N-Channel MOSFET

INCHANGE

IXTQ26N60P Description

isc N-Channel MOSFET Transistor *.

IXTQ26N60P Features

* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 270mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTQ26N60P Applications

* Switching Voltage Regulators
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Plused 65 A PD Total Dissipation @TC=25℃ 460

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Datasheet Details

Part number: IXTQ26N60P
Manufacturer: INCHANGE
File Size: 252.18 KB
Datasheet: IXTQ26N60P-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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IXTQ26N60P Stock/Price