IXTQ22N60P Datasheet, Mosfet, INCHANGE

IXTQ22N60P Features

• Mosfet
• Drain Source Voltage- : VDSS= 600V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 350mΩ(Max)
• Fast Switching
• 100% avalanche tested
• Minimu

PDF File Details

Part number:

IXTQ22N60P

Manufacturer:

INCHANGE

File Size:

252.03kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IXTQ22N60P Application

• Applications
• Switching Voltage Regulators
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Vo

TAGS

IXTQ22N60P

INCHANGE

📁 Related Datasheet

IXTQ22N60P - PolarHV Power MOSFET (IXYS)
.. PolarHV Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet TM IXTQ 22N60P IXTV 22N60P IXTV 22N60PS VDSS ID25 RDS(o.

IXTQ22N50P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTQ22N50P ·FEATURES ·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive .

IXTQ22N50P - PolarHV Power MOSFET (IXYS)
Advance Technical Information .. PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 .

IXTQ220N055T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N055T IXTQ220N055T VDSS = ID25 = RDS(on.

IXTQ220N055T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·Fast Switc.

IXTQ220N075T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH220N075T IXTQ220N075T VDSS = ID25 = RDS(on.

IXTQ200N06P - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) ·Fast Switc.

IXTQ200N06P - Power MOSFET (IXYS)
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 200N06P V DSS ID25 RDS(on) = 60 = 200 ≤ 6.0 V A mΩ Symbol Test Conditions.

IXTQ200N075T - Power MOSFET (IXYS Corporation)
Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(.

IXTQ200N075T - N-ChannelMOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5mΩ(Max) ·Fast Switc.