28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash.
Catalyst Semiconductor
CAT28F010 - 1 Megabit CMOS Flash Memory
CAT28F010 1 Megabit CMOS Flash Memory FEATURES s Fast Read Access Time: 70/90/120 ns s Low Power CMOS Dissipation: Licensed Intel second source s Co.
Intel
P28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick Pulse Programming Algorithm 10 ms Typical.
Vishay
601D828F010JJ1 - Aluminum Capacitor
www.vishay.com 601D Vishay Sprague Aluminum Capacitors +105 °C, Tubular, Axial Lead FEATURES • Temperature range -55 °C to +105 °C • Long life A.
Vishay
601D228F010GE1 - Aluminum Capacitor
www.vishay.com 601D Vishay Sprague Aluminum Capacitors +105 °C, Tubular, Axial Lead FEATURES • Temperature range -55 °C to +105 °C • Long life A.
Vishay
601D828F010GP1 - Aluminum Capacitor
www.vishay.com 601D Vishay Sprague Aluminum Capacitors +105 °C, Tubular, Axial Lead FEATURES • Temperature range -55 °C to +105 °C • Long life A.
Vishay
601D828F010HL1 - Aluminum Capacitor
www.vishay.com 601D Vishay Sprague Aluminum Capacitors +105 °C, Tubular, Axial Lead FEATURES • Temperature range -55 °C to +105 °C • Long life A.
Vishay
601D228F010FJ1 - Aluminum Capacitor
www.vishay.com 601D Vishay Sprague Aluminum Capacitors +105 °C, Tubular, Axial Lead FEATURES • Temperature range -55 °C to +105 °C • Long life A.
Intel Corporation
A28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
A28F010 1024K (128K x 8) CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range b 40 C to a 125 C Flash Memory Electrical Chip-Erase 1 Second .
Advanced Micro Devices
Am28F010A - 1 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory
FINAL Am28F010A 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS s High perfor.
Intel Corporation
M28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
M28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Y Y Y Y Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical.
Intel
E28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase 1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µ.
Intel
MR28F010 - 1024K CMOS Flash Memory
www.DataSheet4U.com www.DataSheet4U.com .
Intel
F28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick Pulse Programming Algorithm 10 ms Typical.
Advanced Micro Devices
AM28F010 - 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
FINAL Am28F010 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum acces.
Intel
TE28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase 1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µ.
Intel
TN28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase 1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µ.
Intel
TP28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase 1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm 10 µ.
Intel
N28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick Pulse Programming Algorithm 10 ms Typical.
Intel
28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical B.
