2N4 Datasheet | Specifications & PDF Download

HI-SINCERITY MICROELECTRONICS CORP. H2N4126 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6216 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Pag

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2N4870 Unijunction Transistor (UJT) TO−92 Type Package Description: The 2N4870 is a PN unijunction transistor in a TO−92 type package designed for us

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6221 Issued Date : 1992.09.30 Revised Date : 2004.08.13 Page No. : 1/5 H2N4403 PNP EPITAXIAL PLANA

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Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 5.

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2N4126 / MMBT4126 Discrete POWER & Signal Technologies 2N4126 MMBT4126 C E C BE TO-92 SOT-23 Mark: ZF B PNP General Purpose Amplifier This devi

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2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 3.86 (0.145) rad. P

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2N4276 (GERMANIUM) thru 2N4283 PNP germanium power transistors designed for high current applications requiring high-gain and low saturation voltage

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TECHNICAL DATA N-CHANNEL J-FET Qualified per MIL-PRF-19500/385 Devices 2N4856 2N4857 2N4858 2N4859 2N4860 2N4861 Qualified Level JAN JANTX JANTXV A

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www.DataSheet.co.kr 2N4003K N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN * * Low Gate Voltage Threshold Vgs(th) to Faci

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2N4870 2N4871 SILICON PN UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4870 and 2N4871 are si

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Unijunction Transistor Description: A PN unijunction transistor in a TO–92 type package designed for use in pulse and timing circuits, sensing circ

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ST 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different

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UNISONIC TECHNOLOGIES CO., LTD 82NXX VOLTAGE DETECTORS „ DESCRIPTION The UTC 82NXX series are highly precise, low power consumption voltage detectors.

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2N4338 | 2N4339 N-Channel JFET - 1 FEATURES LOW NOISE: 4.2NV/√HZ TYPICAL HIGH GAIN: 1.6MS TYPICAL (2N4339) LOW CUTOFF VOLTAGE: 2N4338 < 1.0V DESCRIPT

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2N4029, 2N4033, 2N4033UA, 2N4033UB PNP Silicon Transistor Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/512 • 2N4029 available

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Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturat

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2N4029 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetically sealed TO18 Metal Package

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Philips Semiconductors Product specification PowerMOS transistor PHP2N40 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transis

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2N4000 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package.

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