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2N5401 Datasheet, Features, Application

2N5401 PNP General Purpose Amplifier

2N5401 2N5401 Amplifier Transistor • Collector.

ON Semiconductor

2N5401 - Amplifier Transistor

2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Volta.
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Fairchild Semiconductor

2N5401 - PNP General Purpose Amplifier

2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC (max)=625mW • Suffix “-C” means Conter Collec.
1.0 · rating-1
Motorola

2N5401 - AMPLIFIER TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5400/D Amplifier Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT.
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SEMTECH ELECTRONICS

ST2N5401 - PNP Silicon Epitaxial Planar Transistor

ST 2N5400 / 2N5401 www.DataSheet4U.com PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As compleme.
1.0 · rating-1
Inchange Semiconductor

2N5401 - Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·PNP high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V).
1.0 · rating-1
Central Semiconductor

2N5401 - SILICON PNP TRANSISTOR

2N5400 2N5401 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5400 and 2N5401 are silicon PNP t.
1.0 · rating-1
Hi-Sincerity Mocroelectronics

H2N5401 - PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP. H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6203 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Pag.
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Multicomp

2N5401 - Bipolar Transistor

Bipolar Transistor Features: •  No External Components Required •  Internal Short-Circuit Current Limiting •  Internal Thermal Overload Protection E.
1.0 · rating-1
KEC

2N5401 - EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V.
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Philips

2N5401 - PNP high-voltage transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5400; 2N5401 PNP high-voltage transistors Product specification Supersedes data of Septemb.
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NTE

2N5401 - Silicon NPN Transistor

2N5400 & 2N5401 Silicon PNP Transistor General Purpose Amplifier TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N5400 ..
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KEC

2N5401S - EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V.
1.0 · rating-1
KEC

2N5401C - PNP TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V.
1.0 · rating-1
UTC

2N5401 - HIGH VOLTAGE SWITCHING TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * Collector-emitter voltage: VCEO = -150.
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STMicroelectronics

2N5401HR - 0.5A PNP transistor

2N5401HR Datasheet Rad-Hard 150 V, 0.5 A PNP transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) .
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ON Semiconductor

2N5401G - Amplifier Transistors

2N5400, 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM.
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GTM

G2N5401 - PNP EPITAXIAL PLANAR TRANSISTOR

www.DataSheet4U.com CORPORATION G2N5401 Description Features P NP EP ITAX I AL PL ANAR TANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B .
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