2N5401 Datasheet | Specifications & PDF Download

2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Volta

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INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·PNP high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V)

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ST 2N5400 / 2N5401 www.DataSheet4U.com PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As compleme

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2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC (max)=625mW • Suffix “-C” means Conter Collec

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UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * Collector-emitter voltage: VCEO = -150

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2N5400 & 2N5401 Silicon PNP Transistor General Purpose Amplifier TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N5400 .

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5400; 2N5401 PNP high-voltage transistors Product specification Supersedes data of Septemb

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V

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HI-SINCERITY MICROELECTRONICS CORP. H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6203 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Pag

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5400/D Amplifier Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V

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www.DataSheet4U.com CORPORATION G2N5401 Description Features P NP EP ITAX I AL PL ANAR TANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V

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Bipolar Transistor Features: •  No External Components Required •  Internal Short-Circuit Current Limiting •  Internal Thermal Overload Protection E

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2N5400, 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM

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2N5401HR Datasheet Rad-Hard 150 V, 0.5 A PNP transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1)

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2N5400 2N5401 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5400 and 2N5401 are silicon PNP t

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