2N60-C Datasheet | Specifications & PDF Download

HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GE

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Preliminary Technical Information Polar3TM HiperFETTM IXFA22N60P3 Power MOSFETs IXFP22N60P3 IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3

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PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 82N60P VDSS = 600 V ID25 = 82 A RDS(on) ≤ 78 mΩ ≤ 200 ns trr

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* '6 72  *' 6 72 ) ' * 6 VDS ID VGS PD TJ Tstg EAS Ciss Coss Crss VDS 9,VGS 9 I 0+] VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0+]

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BR12N60(CS12N60) N-CHANNEL MOSFET/N MOS : ， PFC 。 Purpose: These devices are well suited for high efficient switched mode power supplies,active p

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

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www.DataSheet4U.com Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFK 52N60Q2 IXFX 52N60Q2 VDSS ID25 RDS(on) = = = 600 V 52 A

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SEMICONDUCTOR I2N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal si

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isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Re

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UNISONIC TECHNOLOGIES CO., LTD 12N60-C 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have

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GenX3TM 600V IGBT Ultra-low Vsat PT IGBTs for up to 5kHz switching IXGR72N60A3 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 52A 1.35V 250ns Symbol V

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. CM2N60F POWER MOSFET ◆600V N-Channel VDMOS ◆ ◆ RoHS 1． 、LED 、PC 2． ， 1 2 3． TO-220FL

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iscN-Channel MOSFET Transistor IRFP22N60K ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.28Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS

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www.DataSheet4U.com DFD2N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability

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GPT12N60 / GPT12N60D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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DG2N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG2N60N，， ，，，。 ，，。 DG2N60 is an N-channel enhancement mode MOSFET, which is

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HGTG12N60D1D April 1995 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SI

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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet November 1999 File Number 4697.3 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast

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HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS

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