2N60-TC Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 2N6027 PROGRAMMABLE UNIJUNCTION TRANSISTOR  DESCRIPTION The UTC 2N6027 is a programmable unijunction transistor, it us

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HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 12A, 600V • Latch Free O

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UNISONIC TECHNOLOGIES CO., LTD 12N60-C 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have

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UNISONIC TECHNOLOGIES CO., LTD 2N60L 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 1 Power MOSFET TO-220 The UTC 2N60L is a high voltage MOSFET a

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CS2N60(F) CS2N60(F) VDMOS 1. CS2N60(F) N 600V VDMOS ，、 。 ： ● ● ● ● ： CS2N60 CS2N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 4.6Ω ID 2.1A 2.

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CS2N60(F) CS2N60(F) VDMOS 1. CS2N60(F) N 600V VDMOS ，、 。 ： ● ● ● ● ： CS2N60 CS2N60F TO-220 TO-220F VDSS 600V RDS(ON)MAX 4.6Ω ID 2.1A 2.

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UNISONIC TECHNOLOGIES CO., LTD 2N60-F 2A, 600V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 2N60-F is a high voltage power MOSFET and i

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UNISONIC TECHNOLOGIES CO., LTD 12N60 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ www.DataSheet4U.com Power MOSFET DESCRIPTION The UTC 12N60 are N-Cha

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UNISONIC TECHNOLOGIES CO., LTD 2N60-C 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to h

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www.DataSheet4U.com SSM02N60P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive-avalanche rated Fast-switching Simple drive requirement G D BV DSS

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2N6064 (GERMANIUM) 2N6065 2N6066 PNP GERMANIUM POWER TRANSISTORS · .. designed for high-voltage switching applications. • Low Leakage Current ICBO =

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UNISONIC TECHNOLOGIES CO., LTD 2N60 2.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to hav

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2N6067 (SILICON) PNP SILICON ANNULAR TRANSISTOR · .. designed for medium-current saturated switching and core driver applications. • Fast Switching T

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2N6064 (GERMANIUM) 2N6065 2N6066 PNP GERMANIUM POWER TRANSISTORS · .. designed for high-voltage switching applications. • Low Leakage Current ICBO =

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N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package    LED APPLICATIONS  High

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N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package    LED APPLICATIONS  High

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UNISONIC TECHNOLOGIES CO., LTD 2N60-TC Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-TC is a high voltage power MOSFET and

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UNISONIC TECHNOLOGIES CO., LTD 2N60-CBS 2.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-CBS is a high voltage power MOSFET and is designe

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www

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2N6064 (GERMANIUM) 2N6065 2N6066 PNP GERMANIUM POWER TRANSISTORS · .. designed for high-voltage switching applications. • Low Leakage Current ICBO =

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