2N60S Datasheet | Specifications & PDF Download

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel

Rating: 1 ★ (5 votes)

DTP2N60SJ/DTP2N60FSJ/DTU2N60SJ/DTL2N60SJ ZZZGLQ WHNMS /$IBOOFM
607
%4 4VQFS
+VODUJPO
Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 600 VG

Rating: 1 ★ (4 votes)

SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated www.DataSheet4

Rating: 1 ★ (4 votes)

SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated www.DataSheet4

Rating: 1 ★ (4 votes)

V i s h ay I n t e r t e c h n o l o g y, I n c . 600 V Power mosfets SiHG22N60S-E3 / SiHG47N60S-E3 m o sf e t s p r o d uc t o v e r v i e w http:

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SVF12N60T/F/FG/S/K_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

Rating: 1 ★ (4 votes)

HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 1.9 A FEATURES ƒ Originative New Des

Rating: 1 ★ (4 votes)

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

Rating: 1 ★ (3 votes)

Rating: 1 ★ (3 votes)

SVF12N60T/F/FG/S/K_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

Rating: 1 ★ (3 votes)

HFS2N60S Nov 2007 HFS2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 4.2 Ω ID = 2.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanc

Rating: 1 ★ (3 votes)

HFP2N60S March 2014 HFP2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 2.0 A FEATURES ƒ Originative New Design ƒ Superior Avala

Rating: 1 ★ (3 votes)

HFP12N60S Nov 2007 HFP12N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A FEATURES ‰ Originative New Design ‰ Superior Avala

Rating: 1 ★ (3 votes)

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel

Rating: 1 ★ (3 votes)

Isc N-Channel MOSFET Transistor SPB02N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·

Rating: 1 ★ (3 votes)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

Rating: 1 ★ (3 votes)

DTP2N60SJ/DTP2N60FSJ/DTU2N60SJ/DTL2N60SJ ZZZGLQ WHNMS /$IBOOFM
607
%4 4VQFS
+VODUJPO
Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 600 VG

Rating: 1 ★ (2 votes)

2N60(F,B,H,G,D)S 2 Amps,600 Volts N-Channel Super Junction Power MOSFET FEATURE  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A  Low gate charge  Low Ciss 

Rating: 1 ★ (2 votes)

HFP2N60S March 2014 HFP2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 2.0 A FEATURES ƒ Originative New Design ƒ Superior Avala

Rating: 1 ★ (2 votes)