2N60S Datasheet | Specifications & PDF Download

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 H02N60S Series N-Channel

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SM12N60S 600V N-Channel MOSFET TO-220F SM12N60S KONGSON Features: □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Saf

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SM2N60S 600V N-Channel MOSFET TO-220F SM2N60S KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Saf

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V i s h ay I n t e r t e c h n o l o g y, I n c . 600 V Power mosfets SiHG22N60S-E3 / SiHG47N60S-E3 m o sf e t s p r o d uc t o v e r v i e w http:

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SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated www.DataSheet4

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2N60(F,B,H,G,D)S 2 Amps,600 Volts N-Channel Super Junction Power MOSFET FEATURE  2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A  Low gate charge  Low Ciss 

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source www.DataSheet4U.com PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 5

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HFS2N60S Nov 2007 HFS2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 4.2 Ω ID = 2.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanc

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HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 1.9 A FEATURES ƒ Originative New Des

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HFP2N60S March 2014 HFP2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 2.0 A FEATURES ƒ Originative New Design ƒ Superior Avala

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Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 600 VG

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HFP2N60S March 2014 HFP2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 2.0 A FEATURES ƒ Originative New Design ƒ Superior Avala

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SVF12N60T/F/FG/S/K_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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