2N650A, 2N650 (GERMANIUM) 2N651 A, 2N651 2N652A, 2.
2N6510 - Power Transistor
File No.. 848 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ [ID(J8LJD Solid State Division Power Transistors 2N6510-2N6514 High-.H2N6517 - NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6268 Issued Date : 1993.10.05 Revised Date : 2005.01.20 Page No. : 1/5 H2N6517 NPN EPITAXIAL PLANA.2N6514 - Bipolar NPN Device
2N6514 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .2N651 - PNP Transistor
2N650A, 2N650 (GERMANIUM) 2N651 A, 2N651 2N652A, 2N652 GERMANIUM PNP MILLIWATT TRANSISTORS · .. designed primarily for low·power audio amplifier and .2N6514 - Power Transistor
File No.. 848 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ [ID(J8LJD Solid State Division Power Transistors 2N6510-2N6514 High-.2N6512 - Power Transistor
File No.. 848 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ [ID(J8LJD Solid State Division Power Transistors 2N6510-2N6514 High-.2N6517 - NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor 2N6517 Features • High Voltage Transistor • Collector Dissipation: PC(max) = 625 mW • Complement to 2N6520 • Suffix “.2N6511 - Bipolar NPN Device
2N6511 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.2N6515 - High Voltage Transistor
MCC Features omponents 21201 Itasca Street Chatsworth # $ % # NPN 2N6515, 2N6517 P.2N6517 - NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 MARCH 94 FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA 2N6517 C B E ABSOLUTE MAXIMUM RATI.2N6517 - NPN Epitaxial Silicon Transistor
2N6517 — NPN Epitaxial Silicon Transistor 2N6517 NPN Epitaxial Silicon Transistor August 2010 Features • High Voltage Transistor • Collector Dissip.2N6517 - High Voltage Transistor
MCC Features omponents 21201 Itasca Street Chatsworth # $ % # NPN 2N6515, 2N6517 P.2N6518 - PNP Epitaxial Silicon Transistor
2N6518 2N6518 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -250V • Collector Dissipation: PC (max)=625mW • Complement to 2N6515 1 TO-9.2N6519 - PNP Epitaxial Silicon Transistor
2N6519 2N6519 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -300V • Collector Dissipation: PC (max)=625mW TO-92 1 PNP Epitaxial Silico.2N6519 - High Voltage Transistor
MCC Features omponents 21201 Itasca Street Chatsworth # $ % # NPN 2N6515, 2N6517 P.2N651A - PNP Transistor
2N650A, 2N650 (GERMANIUM) 2N651 A, 2N651 2N652A, 2N652 GERMANIUM PNP MILLIWATT TRANSISTORS · .. designed primarily for low·power audio amplifier and .