2SC Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6017 DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Appl

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: I 2SC496, SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : v CE(sat)

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DATA SHEET NPN SILICON TRANSISTOR 2SC945 NPN SILICON TRANSISTOR DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low sp

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General Purpose Transistor 2SC5658-HF (NPN) RoHS Device Halogen Free Comchip SMD Diode Specialist Features -Low Cob. Mechanical data -Case: SOT-723,

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications 2SC4207 Unit: mm  Small

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2347 TV UHF Oscillator Applications TV VHF Mixer Applications 2SC2347 Unit: mm Maximum Ratin

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www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4140 DESCRIPTION ·With TO-3PN package ·High voltage

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to typ

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ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three grou

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Ordering number:EN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features · High breakdown vo

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2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=

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2SC1815 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (NPN) MARKING: Equivalent Circuit: SOT-23 FEATURES: ※ Collector Current: Ic=150mA ※ Pow

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NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z：VCEO=250V (min) z 2SA1943B z 100W z（RoHS） APPLICATIONS z Power Amplifier Application

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DATA SHEET SILICON POWER TRANSISTOR 2SC4814 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4814 is a power transistor featuring l

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Silicon Power Transistor 2SC1505 NPN 2SC1505 www.DataSheet4U.com (1.5 W) 2SC1505 TO-220AB VCBO = 300 V Cob = 4.5 pF MAX. (TO-220AB) TA = 25°C – –

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