2SC512 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 40

Rating: 1 ★ (11 votes)

2SC5124 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC

Rating: 1 ★ (10 votes)

Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1

Rating: 1 ★ (9 votes)

Rating: 1 ★ (8 votes)

Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed

Rating: 1 ★ (7 votes)

Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.

Rating: 1 ★ (6 votes)

www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSh

Rating: 1 ★ (6 votes)

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5124 DESCRIPTION ·With TO-3PML package ·High vo

Rating: 1 ★ (6 votes)

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5129 DESCRIPTION ·With TO-3P(H)IS package ·High

Rating: 1 ★ (6 votes)

Power Transistors 2SC5128 www.DataSheet4U.com Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s

Rating: 1 ★ (6 votes)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 40

Rating: 1 ★ (5 votes)

2SC5124 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC

Rating: 1 ★ (5 votes)

SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATION

Rating: 1 ★ (5 votes)

Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1

Rating: 1 ★ (4 votes)

Rating: 1 ★ (4 votes)

Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.

Rating: 1 ★ (4 votes)

Rating: 1 ★ (4 votes)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

Rating: 1 ★ (4 votes)

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanc

Rating: 1 ★ (4 votes)

Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed

Rating: 1 ★ (3 votes)