2SC512 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 40

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2SC5124 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC

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Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1

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www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5129 DESCRIPTION ·With TO-3P(H)IS package ·High

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Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1

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Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5124 DESCRIPTION ·Silicon NPN diffused planar transistor ·Good Linearity of hFE ·100% ava

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Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.

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Power Transistors 2SC5128 www.DataSheet4U.com Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s

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Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching s Features q High-speed

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanc

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SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATION

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www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5124 DESCRIPTION ·With TO-3PML package ·High vo

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 40

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Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.

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