2SD213 Datasheet | Specifications & PDF Download

Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm

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Power Transistors 2SD2139 Silicon NPN triple diffusion planar type For high-current amplification ratio, power amplification Unit: mm s Features 13.

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www.DataSheet.co.kr Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 7.5±0.2 Uni

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TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive A

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2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Ap

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TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive A

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Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1418 and 2SB1418A

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Power Transistors 2SD2137, 2SD2137A (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitnyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyuc

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Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 7.5±0.2 Unit: mm 4.5±0.2 16.0±1

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Power Transistors 2SD2137, 2SD2137A (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitnyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyuc

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Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver 7.5±0.2 Unit: mm 4.5±0.2 • Low collector-e

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Elektronische Bauelemente 2SD2136 3A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

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RoHS 2SD2136 2SD2136 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 1.25 W (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 3A

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD213 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : V

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2137 DESCRIPTION ·Silicon NPN triple diffusion planar type ·Complementary to 2SB1417 ·Low

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Production specification Power Transistors 2SD2137A FEATURES  High Forward Current Transfer Ratio hFE Which Has Satisfactory Linearity. Pb Lead

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isc Silicon NPN Power Transistor DESCRIPTION ·Silicon NPN triple diffusion planar type ·Complementary to 2SB1417A ·Low Collector to Emitter Saturatio

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Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2138 and 2SD2138A 13.0±0

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