2SD214 Datasheet | Specifications & PDF Download

Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High em

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Equivalent circuit C Built-in Avalanche Diode for Surge Absorbing Darlington 2SD2141 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2141 DESCRIPTION ·High DC Current Gain- : hFE = 1500(Min)@ IC= 3A ·Low Collect

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2SD2142K High-gain Amplifier Transistor (30V, 300mA) Parameter VCES Value 30V lOutline SMT3 　 IC 300mA lFeatures 1)Darlington connection for a hi

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Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High em

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Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2143 Features 1) Built-in zener diode between collector and base. 2) Strong protection

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www.DataSheet4U.com 2SD2142 NPN Plastic Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free Elektro

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www.DataSheet4U.com 2SD2142 NPN Plastic Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free Elektro

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2SD2142K Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features hFE,。 Darling

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2148 www.datasheet4u.com DESCRIPTION ·With TO-3PFM package ·High vo

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD214 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : V

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Built-in Avalanche Diode for Surge Absorbing Darlington Equivalent circuit C 2SD2141 B (1.5kΩ)(100Ω) E Silicon NPN Triple Diffused Planar Transistor

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Silicon Epitaxial Planar Transistor FEATURES  Darlington connection for a high Hfe  High input impedance Pb APPLICATIONS  General purpose amplif

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Wide Area of Safe Operation ·Complement to

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2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Fe

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SMD Type NPN Transistors 2SD2142 ■ Features ● Collector Current Capability IC=300mA ● Collector Emitter Voltage VCEO=32V +0.22.8 -0.1 Transistors

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot

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isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE:1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·

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Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High em

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2SD2142 TRANSISOR (NPN) SOT–23 FEATURES  Darlington Connection for a High hFE  High Input Impedance MARKING: R1M MAXIMUM RATINGS (Ta=25℃ unless

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