SavantIC Semiconductor Product Specification Sil.
2SD2353 - Silicon NPN transistor
2SD2353 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package. / Features ,VCESAT 。 Hig.2SD2357 - Silicon NPN Transistor
Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm s Features 2.6±0.1 4.5±0.1 1.D2353 - 2SD2353
2SD2353 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications www.datasheet4u.com Unit: mm • • High DC current .2SD2351 - General Purpose Transistor
2SD2351 General Purpose Transistor (50V, 150mA) Parameter VCEO IC Value 50V 150mA lFeatures 1)High DC current gain. 2)High emitter-base voltage. (V.2SD2352 - Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2352 Power Amplifier Applications 2SD2352 Unit: mm • High DC current gain: hFE = 800 to 3200 .2SD2353 - Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm • High DC current gain: hFE = 800 to 3200 .2SD2358 - Silicon NPN Transistor
Transistors 2SD2358 Silicon NPN epitaxial planer type Unit: mm For low-frequency output amplification Complementary to 2SB1538 I Features • Low coll.2SD2359 - Silicon PNP Transistor
Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.5±0.1 4.5±0.1 1.6±0.2 s Features 2.6±0.1 0.4max. q.2SD235 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD235 www.datasheet4u.com DESCRIPTION ·With TO-220 package ·Complemen.D2359 - 2SD2359
www.DataSheet.co.kr Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.5±0.1 4.5±0.1 1.6±0.2 s Feature.D235 - 2SD235
SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD235 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20 package ·Complement to .2SD235 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : .