2SD235 Datasheet | Specifications & PDF Download

2SD2351 General Purpose Transistor (50V, 150mA) Parameter VCEO IC Value 50V 150mA lFeatures 1)High DC current gain. 2)High emitter-base voltage. (V

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD235 www.datasheet4u.com DESCRIPTION ·With TO-220 package ·Complemen

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2SD2353 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications www.datasheet4u.com Unit: mm • • High DC current

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD235 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20 package ·Complement to

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm • High DC current gain: hFE = 800 to 3200

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- :

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2SD2353 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features ,VCESAT 。 Hig

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Transistors 2SD2358 Silicon NPN epitaxial planer type Unit: mm For low-frequency output amplification Complementary to 2SB1538 I Features • Low coll

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Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.5±0.1 4.5±0.1 1.6±0.2 s Features 2.6±0.1 0.4max. q

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2352 Power Amplifier Applications 2SD2352 Unit: mm • High DC current gain: hFE = 800 to 3200

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www.DataSheet.co.kr Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.5±0.1 4.5±0.1 1.6±0.2 s Feature

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Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm s Features 2.6±0.1 4.5±0.1 1

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