3-Half Datasheet | Specifications & PDF Download

FD2103 FD2103 FD2103 ， 、 N MOSFET， +180V 。 FD2103 （UVLO）， ，。 FD2103 ， ，。 180V  +180V  +1.0A/-1.0A  3.3V/5V  VCC（UVLO）     100ns DC

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BK4829 Datasheet DS-BK4829-E01 V1.0 2023/5/26 www.bekencorp.com Contents Contents Contents

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Data Sheet No. PD60062 revP (NOTE:For new designs, we recommend IR’s new product IRS2153D) IR2153(D)(S) &(PbF) SELF-OSCILLATING HALF-BRIDGE DRIVER F

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ELECTRONIC GIANT EG3112 Datasheet Half-Bridge Driver Copyright © 2016 by EGmicro Corporation REV 1.0 micro corp. EG3112 datasheet Half-Bridge Dri

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TLE94112ES Features • Twelve half bridge power outputs • Very low power consumption in sleep mode • 3.3V / 5V compatible inputs with hysteresis • All

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sales.Mr.wang13826508770 www.sztssd.com JW1556 Asymmetrical Half-Bridge Flyback Controller DESCRIPTION FEATURES JW1556 is an asymmetrical half-bri

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600V Half Bridge Driver PRODUCT SUMMARY • VOFFSET • IO+/- (min) • VOUT • ton/off (typ.) • Delay Matching 600 V max. 130 mA/270 mA 10 V - 20 V 160 ns

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WAS175M12BM3, 5 WAS175M12BM3T 1200 V, 175 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

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Data Sheet No. PD60174-D IR2184(4)(S) Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative t

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OB2136 650V 3-Phase Half-Bridge Gate-Driver IC General Description OB2136 is a monolithic three-phase half-bridge gate driver IC designed for high vo

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2ED2182 (4) S06F (J) 2ED2182 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon

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Public IGI60L2727B1M Final datasheet CoolGaNTM Drive HB 600V G5 270 m / 600 V GaN half-bridge with level-shift gate drivers Features • Two 270 m Ga

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Data Sheet No. PD60238 revE IRS2153(1)D(S)PbF SELF-OSCILLATING HALF-BRIDGE DRIVER IC Features „ Integrated 600 V half-bridge gate driver „ CT, RT p

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2ED2182 (4) S06F (J) 2ED2182 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon

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2ED2182 (4) S06F (J) 2ED2182 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon

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2ED2182 (4) S06F (J) 2ED2182 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon

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WAS530M12BM3, 5 WAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

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2ED2182 (4) S06F (J) 2ED2182 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon

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2ED2182 (4) S06F (J) 2ED2182 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon

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