3-channel Datasheet | Specifications & PDF Download

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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LED constant current control chip RM9003B General Description ： RM9003B is a one_stage LED constant current driving control chip which Compatible wit

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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NT50198 NT50198 TFT-LCD 3-Channel Charge Pump Power IC Draft Spec. Version 0.05 2012/08/22 2012/08/22 1 Version 0.05 With respect to the informat

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InterFET Product Folder Technical Support Order Now IFN201-A-2 IFN201, IFN201A, IFN202 N-Channel JFET Features • InterFET N106A Geometry • Tight

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Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http:/

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

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a 2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs AD7811/AD7812 FEATURES 10-Bit ADC with 2.3 ␮s Conversion Time The AD7811 has Four Sin

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SVF840T/F/D/S_Datasheet 8A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF840T/F/D/S is an N-channel enhancement mode power MOS field effect transist

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www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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isc N-Channel MOSFET Transistor RJ1G08CGN FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static Drain-Source On-Re

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LTK5325 25.3WG   LTK5325 2 5.3W ，、、AB/D 。、 EMI， ，， ， ，。LTK5325  2.8V-5.5V  BOOST   （ALC）  D 、 EMI 2 ，  、 ，。  THD+N=10%，VB

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a FEATURES Wideband Digital IF Parallel Output Wideband Digital IF Parallel Input Allows Cascade of Chips for Additional Channels Programmable IF and

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HUFA76407P3 Data Sheet December 2001 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE F

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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InterFET Product Folder Technical Support Order Now IFN113 IFN113 N-Channel JFET Features • InterFET N0132S Geometry • Low Noise: 1.2 nV/√Hz Typ

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SINGLE CHANNEL T1/E1/J1 SHORT HAUL LINE INTERFACE UNIT IDT82V2041E FEATURES • Single channel T1/E1/J1 short haul line interfaces • Supports HPS (Hit

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