3-channel Datasheet | Specifications & PDF Download

Power MOSFETS DATASHEET LM30074NAI8A N-Channel Enhancement Mode MOSFET Leadpower-semiconductor Corp., Ltd sales@leadpower-semi.com (03) 6577339 FAX：(

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Single Channel Operational Amplifier LM321 LM321 is a general purpose, single channel op amp with internal compensation and a true differential input

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LED constant current control chip RM9003B General Description ： RM9003B is a one_stage LED constant current driving control chip which Compatible wit

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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G050P03T P-Channel Enhancement Mode Power MOSFET Description The G050P03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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G020N03T N-Channel Enhancement Mode Power MOSFET Description The G020N03T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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FDB070AN06A0 — N-Channel PowerTrench® MOSFET October 2013 FDB070AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 7 mΩ Features Applications • RDS

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8N25/F8N25/I8N25/ E8N25/B8N25/D8N25 8A 250V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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FDBL0150N60 N-Channel PowerTrench® MOSFET FDBL0150N60 N-Channel PowerTrench® MOSFET 60 V, 240 A, 1.5 mΩ June 2015 Features „ Typical RDS(on) = 1.1

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PJM10C30PA N and P-Channel Complementary Power MOSFET Product Summary ⚫ N-Channel ⚫ VDS= 30V,ID= 12A ⚫ RDS(on)< 15mΩ @VGS= 10V ⚫ RDS(on)< 20mΩ @VGS=

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J105 / J106 / J107 — N-Channel Switch J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applica

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N-Channel JFET Switch CORPORATION J108 – J110 / SST108 – SST110 FEATURES Low Cost Automated Insertion Package Low Insertion Loss No Offset or Error V

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DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semico

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Data Sheet N0439N N-channel MOSFET 40 V, 90 A, 3.3 mΩ R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 Description This product is N-channel MOS Field Effect

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SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG*100N042 Rev. 0.9 Jul. 2021 www.su

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