3.30V Datasheet | Specifications & PDF Download

A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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AON6794 30V N-Channel SRFET General Description • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and H

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QM3004D N-Ch 30V Fast Switching MOSFETs General Description The QM3004D is the highest performance trench N-ch MOSFETs with extreme high cell density

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AON7403 30V P-Channel MOSFET General Description Product Summary The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultr

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AON7400A 30V N-Channel MOSFET General Description Product Summary • The AON7400A combines advanced trench MOSFET technology with a low resistance p

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AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (S

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AON6380 30V N-Channel AlphaMOS General Description • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capabi

Rating: 1 ★ (8 votes)

AON7410 30V N-Channel MOSFET General Description The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch

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AON6912A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6912A is designed to provide a high efficiency synchronous

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CMP40P03 P-Ch -30V Fast Switching MOSFETs General Description The CMP40P03 is a P-channel Power MOSFET. It has specifically been designed to minimiz

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AONS36314 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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FDD6680S December 2000 FDD6680S 30V N-Channel PowerTrench SyncFET™ General Description The FDD6680S is designed to replace a single MOSFET and Scho

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FDS6690S May 2000 PRELIMINARY FDS6690S 30V N -Channel PowerTrench® SyncFET™ General Description The FDS6690S is designed to replace a single SO-8 MO

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AO4468 30V N-Channel MOSFET General Description The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extrem

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AON7408 30V N-Channel MOSFET General Description • The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate

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AON7506 30V N-Channel MOSFET General Description • Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Curr

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AON6718 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON6718 uses advanced trench technology with a monolithically int

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30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ

Rating: 1 ★ (7 votes)

http://www.fujielectric.com/products/semiconductor/ 6MBP30VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 30A / IPM Features Low-side IGBTs a

Rating: 1 ★ (7 votes)