3.30V Datasheet | Specifications & PDF Download

A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package

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AON6554 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Char

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AON6324 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS an

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AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extr

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QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme hig

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AO4801A 30V P-Channel MOSFET General Description Product Summary The AO4801A combines advanced trench MOSFET technology with a low resistance packa

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Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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http://www.fujielectric.com/products/semiconductor/ 6MBP30VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 30A / IPM Features Low-side IGBTs a

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AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

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QM3004D N-Ch 30V Fast Switching MOSFETs General Description The QM3004D is the highest performance trench N-ch MOSFETs with extreme high cell density

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Rev 4: May 2005 AO4423 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID

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AP2960 Chipown 30V 3.0A Synchronous CV/CC Step-Down Converter General Description AP2960 is a wide input voltage, high efficiency Synchronous CC/CV

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QN3107M6N N-Channel 30V Fast Switching MOSFET General Description The QN3107M6N is the highest performance trench N-Channel MOSFET with extreme high

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Silan Microelectronics SVT033R5NT_Datasheet 180A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT033R5NT is an N-channel enhancement mode power MOS field

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AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(O

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AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (S

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

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B04N03-VB B04N03-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.002 at VGS = 10 V 0.003 at VGS

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