3.9A Datasheet | Specifications & PDF Download

TP199A1T/2T Zero-Drift, Bi-directional Current Sense Amplifier Features Description  VOLTAGE OFFSET: ±100uV (MAX)  WIDE COMMON MODE VOLTAGE:-0.3V

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TP199A1T/2T Zero-Drift, Bi-directional Current Sense Amplifier Features Description  VOLTAGE OFFSET: ±100uV (MAX)  WIDE COMMON MODE VOLTAGE:-0.3V

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S-19100xxxA Series www.ablic.com © ABLIC Inc., 2012-2020 AUTOMOTIVE, 125°C OPERATION, 10 V VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME

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S-19100xxxA Series www.ablic.com © ABLIC Inc., 2012-2020 AUTOMOTIVE, 125°C OPERATION, 10 V VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME

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S-19100xxxA Series www.ablic.com © ABLIC Inc., 2012-2020 AUTOMOTIVE, 125°C OPERATION, 10 V VOLTAGE DETECTOR WITH DELAY FUNCTION (EXTERNAL DELAY TIME

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD669 2SD669A DESCRIPTION ·With TO-126 package ·Complement to type 2SB64

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Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2929AHQ(Tentative) Maximum Power 47W BTL × 4-ch Audio Power IC TB2929AHQ 1. Description The T

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733-11-I Wuxi I-CORE Electronics Co., Ltd. ：AIP1629A-AX-BJ-113 AIP1629A LED ： 2011-12-A1 2011-12 / 100 9 2 http://www.i-core. cn

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TDA7269A 14W+14W STEREO AMPLIFIER WITH MUTE & ST-BY s WIDE SUPPLY VOLTAGE RANGE UP TO +20V s SPLIT SUPPLY s HHIGH OUTPUT POWER 14+14W @THD = 10%, RL

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DP2539A High Precision CC/CV Primary-Side PWM Power Switch GENERAL DESCRIPTION DP2539A is a high performance offline PWM power switch for low power A

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XB8089A ______________________________________ ________________________________________________________________________________ One Cell Lithium-ion/P

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www.DataSheet4U.com NPN SILICON TRANSISTOR ¶ÔÓ¦¹úÍâкŠ2SD669A ÉÇÍ·»ª µç×ÓÆ÷¼þ ÐÏÞ¹«Ë¾ H669A ¨€ ×÷µÍƹ¦ÂÊ·Å´ó¡£ Ö÷ÒªÓÃ; ¨€ ÍâÐÎ ¼ °Òý½Å Á ¨€

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High Performance CCFL Controller DF6109A —DF6109A （V1.0） z DF6109A ZVS （Zero Voltage Switch） LCD IC，，， 、、；， 、、LCD 、，、 。 z ‹ IC ：4.5V----18V ‹

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4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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HHC69A(JQX-14FC) Miniature PCB Relay Model and Description ★Contact form: A=NO, B=NC, C=NO&NC Specification Dimension Form Rated load Max switching

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3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ =

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DISCONTINUED SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The

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NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5

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