30N06-Q Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lo

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OSD30N06T http://www.osen.net.cn 60V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche e

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STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI www.DataSheet4U.com s s s s s s s s V DSS 60 V 60 V R

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Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N065T2 IXTP130N065T2 VDSS = ID25 = RDS(

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NTP30N06, NTB30N06 Power MOSFET 30 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power sup

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HRP130N06K HRP130N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Char

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB30N06VL/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMO

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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www.DataSheet4U.com DFF30N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75p

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UNISONIC TECHNOLOGIES CO., LTD 30N06 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION 1 TO-220F1 1 TO-220F2 1 TO-220 Power MOSFET 1 TO-220F The UTC 30

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IPD30N06S2-23 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°

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www.DataSheet4U.com NTP30N06L, NTB30N06L Power MOSFET 30 Amps, 60 Volts, Logic Level N–Channel TO–220 and D2PAK Designed for low voltage, high speed

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www.DataSheet4U.com NTP30N06L, NTB30N06L Power MOSFET 30 Amps, 60 Volts, Logic Level N–Channel TO–220 and D2PAK Designed for low voltage, high speed

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MTB30N06VL Preferred Device Power MOSFET 30 Amps, 60 Volts, Logic Level N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the

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NTP30N06, NTB30N06 Power MOSFET 30 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power sup

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP30N06VL/D TMOS V Power Field Effect Transistor TMOS V is a new technolog

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