INCHANGE Semiconductor isc N-Channel MOSFET Transi.
MTB030N10RQ8 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB030N10RQ8 Spec. No. : C053Q8 Issued Date : 2016.11.04 Revised Date : Page No. : .IPP030N10N5 - MOSFET
IPP030N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) p.STU30N10 - N-Channel Enhancement Mode Field Effect Transistor
STU30N10 Sa mHop Microelectronics C orp. STD30N10Green Product Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMM.IXTN30N100L - Power MOSFET
Power MOSFETs with IXTB 30N100L Extended FBSOA IXTN 30N100L N-Channel Enhancement Mode Avalanche Rated VDSS = 1000 V ID25 = 30 A ≤RDS(on) 0.45 Ω .IPP030N10N5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP030N10N5,IIPP030N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.0mΩ ·Enhanc.IPP030N10N3 - Power Transistor
IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.MTB030N10RE3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB030N10RE3 Spec. No. : C053E3 Issued Date : 2016.08.26 Revised Date : Page No. : .IXFK30N100Q2 - Power MOSFET
www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 30N100Q2 IXFX 30N100Q2 VDSS = 1000 V = 30 A ID25 RDS(on) = 0.40 Ω trr ≤ 300 ns N-Channel.IXFA130N10T2 - Power MOSFET
TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA130N10T2 IXFP130N10T2 Symbol VDSS VDGR VG.STF130N10F3 - N-channel Power MOSFET
STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3 N-channel 100 V, 7.8 mΩ typ., 120 A STripFET™III Power MOSFET in TO-220FP, I²PAKFP, H²PAK-2 and .STFI130N10F3 - N-channel Power MOSFET
STF130N10F3, STFI130N10F3, STH130N10F3-2, STP130N10F3 N-channel 100 V, 7.8 mΩ typ., 120 A STripFET™III Power MOSFET in TO-220FP, I²PAKFP, H²PAK-2 and .IGW30N100T - IGBT
IGW30N100T TrenchStop ® series Low Loss IGBT: IGBT in TrenchStop ® and Fieldstop technology C G • TrenchStop ® and Fieldstop technology for 1000 .IPP030N10N3G - Power Transistor
IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low.UTT30N10 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor UTT30N10 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100.030N10N - Power Transistor
IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.030N10N5 - MOSFET
IPP030N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) p.STP130N10F3 - N-Channel MOSFET
STP130N10F3-VB STP130N10F3-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on).CJU30N10 - N-Channel Power MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU30N10 N-Channel Power MOSFET V(BR)DSS 100V RDS(on)MAX .IXFN230N10 - Power MOSFET
Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS.30N10 - N-Channel MOSFET
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N10 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag.