30N10 Datasheet | Specifications & PDF Download

() CRST030N10N,CRSS028N10N SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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isc N-Channel MOSFET Transistor IXFA130N10T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche vo

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Public IPP030N10NF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V Features • Optimized for a wide range of applications • N‑channel

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N10T7 VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ Symbol VDSS VDGR VGSM ID25

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP030N10N3，IIPP030N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancem

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N10 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 30N100Q2 IXFX 30N100Q2 VDSS = 1000 V = 30 A ID25 RDS(on) = 0.40 Ω trr ≤ 300 ns N-Channel

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Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP13

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI030N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fas

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ISC030N10NM6 MOSFET OptiMOSTM 6 Power-Transistor, 100 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x

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ISZ230N10NM6 MOSFET OptiMOSTM 6 Power-Transistor, 100 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x

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() CRSD130N10L2 SkyMOS2 N-MOSFET 100V, 11.0mΩ, 65A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excel

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() CRST030N10NZ SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excel

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Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 30N100Q2 IXFX 30N100Q2 VDSS = 1000 V = 30 A ID25 RDS(on) = 0.40 Ω trr ≤ 300 ns N-Channel

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N10T IXTP130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ TO-263 (IXTA)

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isc N-Channel MOSFET Transistor IXFH230N10T ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3mΩ(Ma

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N10T IXTQ130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ TO-247 (IXTH)

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isc N-Channel MOSFET Transistor IXFA130N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche vol

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IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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