30N10 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N10 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag

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N-Channel Enhancement Mode Power MOSFET MXD30N100 DESCRIPTION The MXD30N100 uses advanced trench technology to provide excellent RDS(ON) and low gate

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TrenchStop® series IGW30N100T Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology • TrenchStop® and Fieldstop technology for 1000 V applica

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() CRST030N10N,CRSS028N10N SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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Public IPP030N10NF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V Features • Optimized for a wide range of applications • N‑channel

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STP130N10F3-VB STP130N10F3-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on)

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IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low

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IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD30N10S3L-34 ·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very

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() CRST030N10NZ SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excel

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() CRST030N10N3Z,CRSS028N10N3Z SkyMOS3 N-MOSFET 100V, 2.6mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance

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IPP030N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) p

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isc N-Channel MOSFET Transistor IXTP130N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche vol

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Silicon N-Channel Power MOSFET ○R CS130N10 A0 General Description： CS130N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTD030N10QJ3 Spec. No. : C168J3 Issued Date : 2016.03.07 Revised Date : 2016.04.27

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isc N-Channel MOSFET Transistor IXFH230N10T ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3mΩ(Ma

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Description APG130N10NF 100V N-Channel Enhancement Mode MOSFET The APG120N10NF uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low

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TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA130N10T2 IXFP130N10T2 Symbol VDSS VDGR VG

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Analog Power N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and

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IGW30N100T TrenchStop ® series Low Loss IGBT: IGBT in TrenchStop ® and Fieldstop technology C G • TrenchStop ® and Fieldstop technology for 1000

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