30N10 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N10 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag

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HM30N10D N-Channel Enhancement Mode Power MOSFET Description The HM30N10D uses advanced trench technology and design to provide excellent RDS(ON) wit

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MOSFET - Power, Single N-Channel, m8FL 100 V, 30 mW, 35 A NTTFS030N10G Features • Wide SOA for Linear Mode Operation • Low RDS(on) to Minimize Condu

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() CRST030N10N,CRSS028N10N SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(

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Public IPP030N10NF2S Final datasheet MOSFET StrongIRFET™ 2 Power‑Transistor, 100 V Features • Optimized for a wide range of applications • N‑channel

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IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFK 30N100Q2 IXFX 30N100Q2 VDSS = 1000 V = 30 A ID25 RDS(on) = 0.40 Ω trr ≤ 300 ns N-Channel

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isc N-Channel MOSFET Transistor IXFA130N10T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche vo

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TrenchStop® series IGW30N100T Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology • TrenchStop® and Fieldstop technology for 1000 V applica

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CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTD030N10QJ3 Spec. No. : C168J3 Issued Date : 2016.03.07 Revised Date : 2016.04.27

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N10T7 VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ Symbol VDSS VDGR VGSM ID25

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IPP030N10N5 MOSFET OptiMOSª5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) p

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() CRST030N10N3Z,CRSS028N10N3Z SkyMOS3 N-MOSFET 100V, 2.6mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance

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IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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() CRST030N10NZ SkyMOS1 N-MOSFET 100V, 2.5mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excel

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N-Channel Enhancement Mode Power MOSFET MXD30N100 DESCRIPTION The MXD30N100 uses advanced trench technology to provide excellent RDS(ON) and low gate

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB030N10RQ8 Spec. No. : C053Q8 Issued Date : 2016.11.04 Revised Date : Page No. :

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Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N10T IXTP130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ TO-263 (IXTA)

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Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP13

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