Datasheet Specifications
- Part number
- IXFN230N10
- Manufacturer
- IXYS Corporation
- File Size
- 281.49 KB
- Datasheet
- IXFN230N10_IXYSCorporation.pdf
- Description
- Power MOSFET
Description
Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS.
Applications
* rated isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 TJ = 25°C TJ = 125°C 4.0 ±200 100 2 6 V V nA µA mA mΩ DC-DC converters BatterIXFN230N10 Distributors
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