IXFN230N10 Datasheet - IXYS Corporation

IXFN230N10, Power MOSFET

Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS.

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IXFN230N10_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN230N10

Manufacturer:

IXYS Corporation

File Size:

281.49 KB

Description:

Power MOSFET

Applications

* rated isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 TJ = 25°C TJ = 125°C 4.0 ±200 100 2 6 V V nA µA mA mΩ DC-DC converters Batter

IXFN230N10 Distributors

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IXFN230N10 Power MOSFET IXYS Corporation

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