* International standard packages miniBLOC, with Aluminium nitride Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low package inductance Fast intrinsic Rectifier Applications rated isolation Mounting torque Terminal connection to
IXFN230N10 Datasheet (281.49 KB)
IXFN230N10
IXYS Corporation
281.49 KB
Power mosfet.
Advanced Technical Information
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS.
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