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IXFN230N10 Datasheet - IXYS Corporation

IXFN230N10 - Power MOSFET

Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, R

IXFN230N10 Features

* • International standard packages • miniBLOC, with Aluminium nitride • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) • Low package inductance • Fast intrinsic Rectifier Applications rated isolation Mounting torque Terminal connection to

IXFN230N10_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN230N10

Manufacturer:

IXYS Corporation

File Size:

281.49 KB

Description:

Power mosfet.

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