Datasheet Details
- Part number
- IXFN230N10
- Manufacturer
- IXYS Corporation
- File Size
- 281.49 KB
- Datasheet
- IXFN230N10_IXYSCorporation.pdf
- Description
- Power MOSFET
IXFN230N10 Description
Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS.
IXFN230N10 Applications
* rated isolation
Mounting torque Terminal connection torque
1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 TJ = 25°C TJ = 125°C 4.0 ±200 100 2 6 V V nA µA mA mΩ
DC-DC converters Batter
📁 Related Datasheet
📌 All Tags