Datasheet Details
- Part number
- IXFN24N100F
- Manufacturer
- IXYS Corporation
- File Size
- 136.40 KB
- Datasheet
- IXFN24N100F_IXYSCorporation.pdf
- Description
- HiPerRF Power MOSFETs
IXFN24N100F Description
Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFN 24N100F VDSS ID25 RDS(on) = = = 1000 24 0.39 V A Ω N-Ch.
IXFN24N100F Features
* l l
1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s
2500 3000
l
l
Mounting torque Terminal connection torque
1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g
l
RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low pa
IXFN24N100F Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 TJ = 25°C TJ = 125°C 5.5 ± 200 V V nA
l l l
VDSS VGH(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = 1 mA V DS = VGS, ID = 8 mA V GS = ±20 VDC, VDS = 0 V DS = VDSS V GS = 0 V
DC-DC converte
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