IXFN24N100F Datasheet - IXYS Corporation

IXFN24N100F, HiPerRF Power MOSFETs

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFN 24N100F VDSS ID25 RDS(on) = = = 1000 24 0.39 V A Ω N-Ch.

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IXFN24N100F_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN24N100F

Manufacturer:

IXYS Corporation

File Size:

136.40 KB

Description:

HiPerRF Power MOSFETs

Features

* l l 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 l l Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low pa

Applications

* l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 TJ = 25°C TJ = 125°C 5.5 ± 200 V V nA l l l VDSS VGH(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 1 mA V DS = VGS, ID = 8 mA V GS = ±20 VDC, VDS = 0 V DS = VDSS V GS = 0 V DC-DC converte

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IXFN24N100F HiPerRF Power MOSFETs IXYS Corporation

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