* l l 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 l l Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low pa
IXFN24N100F Datasheet (136.40 KB)
IXFN24N100F
IXYS Corporation
136.40 KB
Hiperrf power mosfets.
Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFN 24N100F VDSS ID25 RDS(on) = = = 1000 24 0.39 V A Ω N-Ch.
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