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IXFN24N100 (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET

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Description

HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet VDSS ID25 RDS(on) 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A t.

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Datasheet Specifications

Part number
IXFN24N100
Manufacturer
IXYS Corporation
File Size
120.10 KB
Datasheet
IXFN24N100_IXYSCorporation.pdf
Description
(IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET

Features

* International standard package
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS

Applications

* DC-DC converters
* Synchronous rectification
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* Temperature and lighting controls
* Low voltage relays Advantages
* Easy to mount
* Space savings

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