IXFN24N100 Datasheet - IXYS Corporation

IXFN24N100 (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET

HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet VDSS ID25 RDS(on) 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1 Maximum Ratings 1000 1000 ± 20 ± 30 24N100 23N100 24N100 23N100 24 23 96 92 24 60 3 5 600 -.

IXFN24N100 Features

* International standard package

* Encapsulating epoxy meets UL 94 V-0, flammability classification

* miniBLOC with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS

IXFN24N100 Datasheet (120.10 KB)

IXFN24N100 Datasheet Preview — Preview of IXFN24N100 PDF

Datasheet Details

Part number:

IXFN24N100

Manufacturer:

IXYS Corporation

File Size:

120.10 KB

Description:

(ixfn23n100 / ixfn24n100) hiperfet-tm power mosfet.

📁 Related Datasheet

IXFN24N100F HiPerRF Power MOSFETs (IXYS Corporation)

IXFN240N15T2 GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)

IXFN200N06 HiPerFET Power MOSFETs (IXYS)

IXFN200N07 HiPerFET Power MOSFETs (IXYS)

IXFN200N10P Polar HiPerFET Power MOSFET (IXYS)

IXFN20N120 HiPerFET Power MOSFETs (IXYS Corporation)

IXFN20N120P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFN21N100Q Power MOSFET (IXYS)

IXFN220N20X3 Power MOSFET (IXYS)

IXFN230N10 Power MOSFET (IXYS Corporation)

TAGS

IXFN24N100 IXFN23N100 IXFN24N100 HiPerFET-TM Power MOSFET IXYS Corporation

IXFN24N100 Distributor