Description
www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr .
Features
* G = Gate S = Source D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
* International standard package
* miniBLOC, with Aluminium nitride
isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unc
Applications
* Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 3.0 5.0 ±200 TJ = 25°C TJ = 125°C 26N90 25N90 100 2 0.30 0.33 V V nA mA mA W W
* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode
power supplies
VDSS VGH(th) IGSS IDSS RDS