IXFN26N100P Polar Power MOSFET HiPerFET

IXYS Corporation

Description

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

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Datasheet Specifications

Part number: IXFN26N100P
Manufacturer: IXYS Corporation
File Size: 128.83 KB
Datasheet: IXFN26N100P_IXYSCorporation.pdf
Description: Polar Power MOSFET HiPerFET

Features

* z z 1.6mm (0.062 in. ) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting torque Terminal connection torque t = 1min t = 1s 300 2500 3000 1.5/13 1.3/11.5 30 z z z z International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride

Applications

* z z z z z 25 μA 2.0 mA 390 mΩ Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls ©2008 IXYS CORPORATION, All rights reserved DS99878A(4/08) IXFN26N100P Symbol Test Conditions (TJ = 25°C unless otherwise specified)

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IXFN26N100P Polar Power MOSFET HiPerFET IXYS Corporation

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