IXFN26N90 Datasheet - IXYS

IXFN26N90 HiPerFET Power MOSFETs Single Die MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G D VDSS 900 V 900 V ID (cont) 26 A 25 A RDS(on) 0.30 W 0.33 W trr 250 ns 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight Symbol Test Conditions 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.

IXFN26N90 Features

* G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source

* International standard package

* miniBLOC, with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unc

IXFN26N90_IXYS.pdf