IXFN26N90 Datasheet - IXYS

IXFN26N90 HiPerFET Power MOSFETs Single Die MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G D VDSS 900 V 900 V ID (cont) 26 A 25 A RDS(on) 0.30 W 0.33 W trr 250 ns 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight Symbol Test Conditions 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.

IXFN26N90 Features

* G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source

* International standard package

* miniBLOC, with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unc

IXFN26N90 Datasheet (167.17 KB)

IXFN26N90 Datasheet Preview — Preview of IXFN26N90 PDF

Datasheet Details

Part number:

IXFN26N90

Manufacturer:

IXYS

File Size:

167.17 KB

Description:

Hiperfet power mosfets single die mosfet.

📁 Related Datasheet

IXFN26N100P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFN26N120P Polar Power MOSFET (IXYS Corporation)

IXFN260N17T GigaMOS Power MOSFET (IXYS)

IXFN200N06 HiPerFET Power MOSFETs (IXYS)

IXFN200N07 HiPerFET Power MOSFETs (IXYS)

IXFN200N10P Polar HiPerFET Power MOSFET (IXYS)

IXFN20N120 HiPerFET Power MOSFETs (IXYS Corporation)

IXFN20N120P Polar Power MOSFET HiPerFET (IXYS Corporation)

IXFN21N100Q Power MOSFET (IXYS)

IXFN220N20X3 Power MOSFET (IXYS)

TAGS

IXFN26N90 HiPerFET Power MOSFETs Single Die MOSFET IXYS

IXFN26N90 Distributor