IXFN26N90 HiPerFET Power MOSFETs Single Die MOSFET

IXYS

Description

www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr .

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Datasheet Specifications

Part number: IXFN26N90
Manufacturer: IXYS
File Size: 167.17 KB
Datasheet: IXFN26N90_IXYS.pdf
Description: HiPerFET Power MOSFETs Single Die MOSFET

Features

* G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source
* International standard package
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unc

Applications

* Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 3.0 5.0 ±200 TJ = 25°C TJ = 125°C 26N90 25N90 100 2 0.30 0.33 V V nA mA mA W W
* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies VDSS VGH(th) IGSS IDSS RDS

IXFN26N90 Distributors

📁 Related Datasheet

IXFN26N100P IXFN26N120P IXFN20N120 IXFN20N120P IXFN230N10 IXFN23N100

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IXFN26N90 HiPerFET Power MOSFETs Single Die MOSFET IXYS

IXYS IXFN26N90-like datasheet