IXFN23N100 Datasheet - IXYS Corporation

IXFN23N100 (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET

HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet VDSS ID25 RDS(on) 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1 Maximum Ratings 1000 1000 ± 20 ± 30 24N100 23N100 24N100 23N100 24 23 96 92 24 60 3 5 600 -.

IXFN23N100 Features

* International standard package

* Encapsulating epoxy meets UL 94 V-0, flammability classification

* miniBLOC with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS

IXFN23N100 Datasheet (120.10 KB)

IXFN23N100 Datasheet Preview — Preview of IXFN23N100 PDF

Datasheet Details

Part number:

IXFN23N100

Manufacturer:

IXYS Corporation

File Size:

120.10 KB

Description:

(ixfn23n100 / ixfn24n100) hiperfet-tm power mosfet.

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IXFN23N100 IXFN23N100 IXFN24N100 HiPerFET-TM Power MOSFET IXYS Corporation

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