Description
HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet VDSS ID25 RDS(on) 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A t.
Features
* International standard package
* Encapsulating epoxy meets UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS
Applications
* DC-DC converters
* Synchronous rectification
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* Temperature and lighting controls
* Low voltage relays Advantages
* Easy to mount
* Space savings