HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet VDSS ID25 RDS(on) 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1 Maximum Ratings 1000 1000 ± 20 ± 30 24N100 23N100 24N100 23N100 24 23 96 92 24 60 3 5 600 -
IXFN24N100_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFN23N100, IXFN24N100
Manufacturer:
IXYS Corporation
File Size:
120.10 KB
Description:
(ixfn23n100 / ixfn24n100) hiperfet-tm power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFN23N100, IXFN24N100.
Please refer to the document for exact specifications by model.