Datasheet Details
- Part number
- IXFN20N120
- Manufacturer
- IXYS Corporation
- File Size
- 587.98 KB
- Datasheet
- IXFN20N120_IXYSCorporation.pdf
- Description
- HiPerFET Power MOSFETs
IXFN20N120 Description
Advanced Technical Information HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 20N120 VDSS ID25 D =.
IXFN20N120 Features
* International standard package
* miniBLOC, with Aluminium nitride
isolation
50/60 Hz, RMS IISOL ≤ 1 mA
t = 1 min t=1s
2500 3000
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS)
rated
Md
Moun
IXFN20N120 Applications
* DC-DC converters
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 100 2 0.75 V V nA µA mA Ω
* Battery chargers Switched-mode and resonant-mode power supplie
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