IXFN20N120 Datasheet - IXYS Corporation

IXFN20N120 - HiPerFET Power MOSFETs

Advanced Technical Information HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 20N120 VDSS ID25 D = 1200 V = 20 A RDS(on) = 0.75 Ω ≤ 300 ns trr G S S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 1.

IXFN20N120 Features

* International standard package

* miniBLOC, with Aluminium nitride isolation 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated Md Moun

IXFN20N120_IXYSCorporation.pdf