IXFN20N120 HiPerFET Power MOSFETs

IXYS Corporation

Description

Advanced Technical Information HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 20N120 VDSS ID25 D =.

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Datasheet Specifications

Part number: IXFN20N120
Manufacturer: IXYS Corporation
File Size: 587.98 KB
Datasheet: IXFN20N120_IXYSCorporation.pdf
Description: HiPerFET Power MOSFETs

Features

* International standard package
* miniBLOC, with Aluminium nitride isolation 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated Md Moun

Applications

* DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 100 2 0.75 V V nA µA mA Ω
* Battery chargers Switched-mode and resonant-mode power supplie

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IXFN20N120 HiPerFET Power MOSFETs IXYS Corporation

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