IXFN230N20T Datasheet - IXYS

IXFN230N20T, GigaMOS Power MOSFET

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN230N20.

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IXFN230N20T_IXYS.pdf

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Datasheet Details

Part number:

IXFN230N20T

Manufacturer:

IXYS

File Size:

167.31 KB

Description:

GigaMOS Power MOSFET

Applications

* 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID

IXFN230N20T Distributors

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IXFN230N20T GigaMOS Power MOSFET IXYS

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