HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFN 21N100Q Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL M d Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 50/60 Hz, RMS t = 1 min IISOL≤ 1 mA t=1s Mounting torqu
Datasheet Details
Part number:
IXFN21N100Q
Manufacturer:
IXYS
File Size:
200.49 KB
Description:
Power mosfet.