* IXYS advanced low Qg process
* Low gate charge and capacitances - easier to drive -faster switching
* Unclamped Inductive Switching (UIS) rated
* Low RDS (on)
* Fast intrinsic diode
* International standard package
* miniBLOC with Aluminium nitride
IXFN21N100Q Datasheet (200.49 KB)
IXFN21N100Q
IXYS
200.49 KB
Power mosfet.
HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFN 21N100Q Symbol VDSS VDGR VGS .
📁 Related Datasheet
IXFN200N06 HiPerFET Power MOSFETs (IXYS)
IXFN200N07 HiPerFET Power MOSFETs (IXYS)
IXFN200N10P Polar HiPerFET Power MOSFET (IXYS)
IXFN20N120 HiPerFET Power MOSFETs (IXYS Corporation)
IXFN20N120P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFN220N20X3 Power MOSFET (IXYS)
IXFN230N10 Power MOSFET (IXYS Corporation)
IXFN230N20T GigaMOS Power MOSFET (IXYS)
IXFN23N100 (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET (IXYS Corporation)
IXFN240N15T2 GigaMOS TrenchT2 HiperFET Power MOSFET (IXYS)
