Datasheet Details
Part number:
IXFN200N07, IXFN200N06
Manufacturer:
IXYS
File Size:
214.65 KB
Description:
Hiperfet power mosfets.
Note:
This datasheet PDF includes multiple part numbers: IXFN200N07, IXFN200N06.
Please refer to the document for exact specifications by model.
IXFN200N07, IXFN200N06, HiPerFET Power MOSFETs
www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 60 V 70 V 70 V ID25 200 A 180 A 200 A trr £ 250 ns RDS(on) 6 mW 7 mW 6 mW Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC= 25°C; Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM T
IXFN200N07 Features
* International standard packages
* miniBLOC with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance
* Fast intrinsic Rectifie
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