IXFN200N06 HiPerFET Power MOSFETs

IXYS

Description

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 200 N06 IXFN 180 N07 IXFN 200.

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Datasheet Specifications

Part number: IXFN200N06
Manufacturer: IXYS
File Size: 214.65 KB
Datasheet: IXFN200N06_IXYS.pdf
Description: HiPerFET Power MOSFETs

Features

* International standard packages
* miniBLOC with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance
* Fast intrinsic Rectifie

Applications

* DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies
* DC choppers
* Temperature and lighting controls
* Low voltage relays Symbol Test Conditions Characteristic Values (TJ = 25°C

IXFN200N06 Distributors

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IXFN200N06 HiPerFET Power MOSFETs IXYS

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