IXFN200N06 Datasheet - IXYS

IXFN200N06 - HiPerFET Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 60 V 70 V 70 V ID25 200 A 180 A 200 A trr £ 250 ns RDS(on) 6 mW 7 mW 6 mW Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC= 25°C; Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM T.

IXFN200N06 Features

* International standard packages

* miniBLOC with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance

* Fast intrinsic Rectifie

IXFN200N06_IXYS.pdf