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IXFN260N17T GigaMOS Power MOSFET

IXFN260N17T Description

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN260N17.

IXFN260N17T Applications

* 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID

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Datasheet Details

Part number
IXFN260N17T
Manufacturer
IXYS
File Size
148.34 KB
Datasheet
IXFN260N17T_IXYS.pdf
Description
GigaMOS Power MOSFET

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GigaMOS Power MOSFET IXYS
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