32-MBIT Datasheet | Specifications & PDF Download

HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash M

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Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit/64-Mbit PSRAM Single 88-ball (8 mm x 10 mm x 1.2 mm) CBGA Package 1.7V to 1.95V VCC 1.8V t

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CY7C25632KV18 CY7C25652KV18 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit QDR® II+ SRAM Four-Word Burs

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HY5RS123235BFP 512Mbit (16Mx32) GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hy

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M95P32-I M95P32-E Datasheet Ultra low power 32-Mbit serial SPI page EEPROM with dual and quad outputs UFDFPN8 (4 x 4 mm) SO8N (4.9 x 6 mm) WLCSP8 (2.

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www.DataSheet4U.com www.DataSheet4U.com

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CY7C1217H www.DataSheet4U.com 1-Mbit (32K x 36) Flow-Through Sync SRAM Features • 32K x 36 common I/O • 3.3V core power supply (VDD) • 2.5V/3.3V I/O

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M27C322 32 Mbit (2Mb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 80ns WORD-WIDE CONFIGURABLE 32 Mbit MASK RO

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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AT25SF321B 32-Mbit SPI Serial Flash Memory with Dual I/O and Quad I/O Support Datasheet Features ▪ Single 2.7 V - 3.6 V Single Supply Voltage ▪ Seri

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IS42R83200D, IS42R16160D IS45R83200D, IS45R16160D 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM MARCH 2010 FEATURES • Clock frequency: 133, 10

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www.DataSheet4U.com EN25B32 EN25B32 32 Mbit Serial Flash Memory with Boot and Parameter Sectors FEATURES • Single power supply operation - Full volt

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HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M

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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19

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CY7C1319KV18/CY7C1321KV18 18-Mbit DDR II SRAM Four-Word Burst Architecture 18-Mbit DDR II SRAM Four-Word Burst Architecture Features ■ 18-Mbit densit

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M27C320 32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM PRELIMINARY DATA s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 80ns BYTE-WIDE or WORD-W

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IS42S81600A, IS42S16800A, IS42S32400A, 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166,143,100 MHz • Fully s

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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