32-MBIT Datasheet | Specifications & PDF Download

M95P32-I M95P32-E Datasheet Ultra low power 32-Mbit serial SPI page EEPROM with dual and quad outputs UFDFPN8 (4 x 4 mm) SO8N (4.9 x 6 mm) WLCSP8 (2.

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CY7C25632KV18 CY7C25652KV18 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 72-Mbit QDR® II+ SRAM Four-Word Burs

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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K4S280832A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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TC58FVT321/B321FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTI

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HY27US(08/16)561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

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HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash M

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HY5RS123235BFP 512Mbit (16Mx32) GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hy

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M27C322 32 Mbit (2Mb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 80ns WORD-WIDE CONFIGURABLE 32 Mbit MASK RO

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HY29LV320 32 Mbit (2M x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.

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CY7C1319KV18/CY7C1321KV18 18-Mbit DDR II SRAM Four-Word Burst Architecture 18-Mbit DDR II SRAM Four-Word Burst Architecture Features ■ 18-Mbit densit

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M27C320 32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM PRELIMINARY DATA s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 80ns BYTE-WIDE or WORD-W

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CY7C1217H www.DataSheet4U.com 1-Mbit (32K x 36) Flow-Through Sync SRAM Features • 32K x 36 common I/O • 3.3V core power supply (VDD) • 2.5V/3.3V I/O

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Features • 32-Mbit Flash and 4-Mbit/8-Mbit PSRAM • Single 66-ball (8 mm x 10 mm x 1.2 mm) CBGA Package • 2.7V to 3.3V Operating Voltage www.DataSheet

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CY7C1071DV33 32-Mbit (2 M × 16) Static RAM 32-Mbit (2 M × 16) Static RAM Features ■ High speed ❐ tAA = 12 ns ■ Low active power ❐ ICC = 250 mA at 83.

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