36-CHANNEL Datasheet | Specifications & PDF Download

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  P

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N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME7362 is the N-Channel logic enhancement mode power field effect transistors are produced using hig

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RT3674AE Triple Channel PWM Controller for AMD SVI3 CPU/GPU Core Power Supply General Description The RT3674AE is a synchronous buck controller whic

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Preliminary RT3624BE Dual Channel PWM Controller for IMVP9.1 CPU Core Power Supply General Description The RT3624BE is a synchronous buck controlle

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® RT3606BC Dual Channel PWM Controller with Integrated Driver for IMVP8 CPU Core Power Supply General Description Features The RT3606BC is an IMVP

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AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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MMP60R360P Datasheet MMP60R360P 600V 0.36Ω N-channel MOSFET  Description MMP60R360P is power MOSFET using magnachip’s advanced super junction techno

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SM4336NSKP Features · 30V/65A, RDS(ON)=5.3mW (Max.) @ VGS=10V RDS(ON)=7.5mW (Max.) @ VGS=4.5V · Reliable and Rugged · ESD Protection · Lead Free and G

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

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MOSFET – N-Channel, POWERTRENCH) 80 V, 100 A, 4.2 mW FDD86367-F085 Features • Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 6

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Ap

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SCX70R360C6 700V N-Channel Super Junction Power MOSFET GENERAL DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. Th

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607，IIRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP360 FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Volt

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF360 DESCRIPTION ·silicon Gate for fast switching at elevate ·rug

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MMF60R360Q Datasheet MMF60R360Q 600V 0.36Ω N-channel MOSFET  Description MMF60R360Q is power MOSFET using Magnachip’s advanced super junction techno

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„ PRODUCT CHARACTERISTICS VDSS RDS(on)Typ(@VGS =10 V) RDS(on)Typ(@VGS =4.5 V) ID 30V 2.4mΩ 3.8mΩ 120A „ APPLICATIONS * Power switching application

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MOSFET – N-Channel, POWERTRENCH) 100 V, 32 A, 36 mW FDB3682, FDP3682 Features • RDS(on) = 32 mW (Typ.) @ VGS = 10 V, ID = 32 A • QG(tot) = 18.5 nC (T

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MOSFET – N-Channel, POWERTRENCH) 100 V, 61 A, 16 mW FDP3652, FDB3652 Features • RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 61 A • Qg(tot) = 41 nC (Typ

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AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

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