36-CHANNEL Datasheet | Specifications & PDF Download

MMP60R360P Datasheet MMP60R360P 600V 0.36Ω N-channel MOSFET  Description MMP60R360P is power MOSFET using magnachip’s advanced super junction techno

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MMF60R360Q Datasheet MMF60R360Q 600V 0.36Ω N-channel MOSFET  Description MMF60R360Q is power MOSFET using Magnachip’s advanced super junction techno

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Preliminary RT3624BE Dual Channel PWM Controller for IMVP9.1 CPU Core Power Supply General Description The RT3624BE is a synchronous buck controlle

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AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capab

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RT3674AE Triple Channel PWM Controller for AMD SVI3 CPU/GPU Core Power Supply General Description The RT3674AE is a synchronous buck controller whic

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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • Hig

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3607，IIRFB3607 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement

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AONS36344 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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® RT3606BC Dual Channel PWM Controller with Integrated Driver for IMVP8 CPU Core Power Supply General Description Features The RT3606BC is an IMVP

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® RT3607BC Dual Channel PWM Controller with Integrated Driver for IMVP8 CPU CORE Power Supply General Description The RT3607BC is an IMVP8 compliant

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AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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® RT3602AE Triple Channel PWM Controller for IMVP8 Mobile CPU Core Power Supply General Description The RT3602AE is an IMVP8 compliant CPU power con

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AONY36352 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Ca

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HY3610P N-Channel Enhancement Mode MOSFET Features Pin Description • 100V/160A RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliabl

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AONS36316 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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SM4364NAKP ® N-Channel Enhancement Mode MOSFET Features • 30V/60A, RDS(ON)=5.7mΩ (Max.) @ VGS=10V RDS(ON)=7.6mΩ (Max.) @ VGS=4.5V Pin Description

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® RT3602AC Triple Channel PWM Controller with Integrated Driver for IMVP8 Mobile CPU Core Power Supply General Description The RT3602AC is an IMVP8

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Ap

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N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME7362 is the N-Channel logic enhancement mode power field effect transistors are produced using hig

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AONH36334 30V Dual Asymmetric N-Channel MOSFET General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Ch

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